Philips buk436w-800a-b 1 free download

File name buk436w-800a-b_1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A (SMPS), motor control, welding, Ptot Total power dissipation 125 125 W DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 3 4 in general purpose switching resistance applications. PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 1 gate 2 drain g 3 source tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 800 V VDGR Drain-gate voltage RGS = 20 k - 800 V